WNM3013 mosfet equivalent, n-channel mosfet.
z Trench N-Channel z Supper high density cell design for extremely low
Rds(on) z Exceptional ON resistance and maximum DC
current capability z Small package design with S.
Marking
z Driver: Relays, Solenoids, Lamps, Hammers z Power supply converters circuit z Load/Power Switching for potab.
The WNM3013 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product WNM3013 is P.
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